WebThe crystallization temperature of SiC thin films sputtered from an SiC target is about 500°C, below which the films are amorphous. However, the stable amorphous phase is obtained in SiC thin films reactively sputtered from a Si target in a C 2 H 2 or CH 4 gas. [288] Typical sputtering conditions for the deposition of amorphous SiC films are shown in Table 5.56. WebZone melting. v. t. e. In chemistry, fractional crystallization is a method of refining substances based on differences in their solubility. It fractionates via differences in …
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